SI4900DY-T1-GE3
Vishay Siliconix
Vishay Siliconix
MOSFET 2N-CH 60V 5.3A 8-SOIC
$1.31
Available to order
Reference Price (USD)
2,500+
$0.55440
5,000+
$0.52668
12,500+
$0.50688
Exquisite packaging
Discount
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Boost your project s performance with Vishay Siliconix s SI4900DY-T1-GE3, a standout in the Discrete Semiconductor Products category for Transistors - FETs, MOSFETs - Arrays. These components offer superior features such as high efficiency, low noise, and extended lifespan, making them suitable for a variety of advanced applications. From IoT devices to energy-efficient systems, SI4900DY-T1-GE3 provides the reliability you need. Don t wait reach out to us today for more information and to request a sample of SI4900DY-T1-GE3.
Specifications
- Product Status: Active
- FET Type: 2 N-Channel (Dual)
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 60V
- Current - Continuous Drain (Id) @ 25°C: 5.3A
- Rds On (Max) @ Id, Vgs: 58mOhm @ 4.3A, 10V
- Vgs(th) (Max) @ Id: 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 665pF @ 15V
- Power - Max: 3.1W
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: 8-SOIC
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