SI5513DC-T1-GE3
Vishay Siliconix
Vishay Siliconix
MOSFET N/P-CH 20V 3.1A 1206-8
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Enhance your electronic applications with Vishay Siliconix s SI5513DC-T1-GE3, a leading product in the Discrete Semiconductor Products category for Transistors - FETs, MOSFETs - Arrays. These components are known for their high-speed performance, low energy consumption, and robust design. Perfect for use in switching regulators, audio systems, and communication devices. Discover the benefits of SI5513DC-T1-GE3 today get in touch with us for a detailed quote and technical support.
Specifications
- Product Status: Obsolete
- FET Type: N and P-Channel
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 20V
- Current - Continuous Drain (Id) @ 25°C: 3.1A, 2.1A
- Rds On (Max) @ Id, Vgs: 75mOhm @ 3.1A, 4.5V
- Vgs(th) (Max) @ Id: 1.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 6nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: -
- Power - Max: 1.1W
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-SMD, Flat Lead
- Supplier Device Package: 1206-8 ChipFET™
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