SI6562CDQ-T1-BE3
Vishay Siliconix
Vishay Siliconix
N- AND P-CHANNEL 20-V (D-S) MOSF
$1.07
Available to order
Reference Price (USD)
1+
$1.07000
500+
$1.0593
1000+
$1.0486
1500+
$1.0379
2000+
$1.0272
2500+
$1.0165
Exquisite packaging
Discount
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The SI6562CDQ-T1-BE3 from Vishay Siliconix is a top choice in the Discrete Semiconductor Products category, particularly for Transistors - FETs, MOSFETs - Arrays. With features like high breakdown voltage, low gate drive, and excellent thermal performance, these components are ideal for power electronics and high-frequency applications. Whether for consumer electronics or industrial machinery, SI6562CDQ-T1-BE3 delivers consistent quality. Contact us now to learn more and secure your supply of Vishay Siliconix s premium semiconductors.
Specifications
- Product Status: Active
- FET Type: N and P-Channel
- FET Feature: Standard
- Drain to Source Voltage (Vdss): 20V
- Current - Continuous Drain (Id) @ 25°C: 5.7A (Ta), 6.7A (Tc), 5.1A (Ta), 6.1A (Tc)
- Rds On (Max) @ Id, Vgs: 22mOhm @ 5.7A, 4.5V, 30mOhm @ 5.1A, 4.5V
- Vgs(th) (Max) @ Id: 1.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 23nC @ 10V, 51nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 850pF @ 10V, 1200pF @ 10V
- Power - Max: 1.1W (Ta), 1.6W (Tc), 1.2W (Ta), 1.7W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-TSSOP (0.173", 4.40mm Width)
- Supplier Device Package: 8-TSSOP
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Vishay Siliconix