SI6562CDQ-T1-GE3
Vishay Siliconix
Vishay Siliconix
MOSFET N/P-CH 20V 6.7A 8-TSSOP
$1.07
Available to order
Reference Price (USD)
3,000+
$0.48380
6,000+
$0.46109
15,000+
$0.44486
Exquisite packaging
Discount
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Enhance your electronic applications with Vishay Siliconix s SI6562CDQ-T1-GE3, a leading product in the Discrete Semiconductor Products category for Transistors - FETs, MOSFETs - Arrays. These components are known for their high-speed performance, low energy consumption, and robust design. Perfect for use in switching regulators, audio systems, and communication devices. Discover the benefits of SI6562CDQ-T1-GE3 today get in touch with us for a detailed quote and technical support.
Specifications
- Product Status: Active
- FET Type: N and P-Channel
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 20V
- Current - Continuous Drain (Id) @ 25°C: 6.7A, 6.1A
- Rds On (Max) @ Id, Vgs: 22mOhm @ 5.7A, 4.5V
- Vgs(th) (Max) @ Id: 1.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 23nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 850pF @ 10V
- Power - Max: 1.6W, 1.7W
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-TSSOP (0.173", 4.40mm Width)
- Supplier Device Package: 8-TSSOP
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