SI9435BDY-T1-E3
Vishay Siliconix
Vishay Siliconix
MOSFET P-CH 30V 4.1A 8SO
$0.93
Available to order
Reference Price (USD)
2,500+
$0.35968
5,000+
$0.33634
12,500+
$0.32467
25,000+
$0.31830
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Discover SI9435BDY-T1-E3, a versatile Transistors - FETs, MOSFETs - Single solution from Vishay Siliconix, a trusted name in Discrete Semiconductor Products. This MOSFET combines high power density with low on-resistance, perfect for compact and energy-efficient designs. Applications include solar inverters, electric vehicles, and wearable technology. Interested in this innovative component? Send us your inquiry now for more information!
Specifications
- Product Status: Active
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30 V
- Current - Continuous Drain (Id) @ 25°C: 4.1A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Rds On (Max) @ Id, Vgs: 42mOhm @ 5.7A, 10V
- Vgs(th) (Max) @ Id: 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: -
- FET Feature: -
- Power Dissipation (Max): 1.3W (Ta)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 8-SOIC
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
Related Products
Microchip Technology
TN5325K1-G
Taiwan Semiconductor Corporation
TSM160N10CZ C0G
Diodes Incorporated
ZXMN10A11KTC
Diodes Incorporated
DMP1012UFDF-7
STMicroelectronics
STD2N95K5
onsemi
NVMFS5C682NLAFT1G
IXYS
IXFT30N50Q3
Infineon Technologies
IPI034NE7N3G
Vishay Siliconix
IRFI840GPBF
IXYS