SIA437DJ-T1-GE3
Vishay Siliconix
Vishay Siliconix
MOSFET P-CH 20V 29.7A PPAK SC70
$0.72
Available to order
Reference Price (USD)
3,000+
$0.29747
6,000+
$0.27817
15,000+
$0.26852
30,000+
$0.26325
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Upgrade your electronic designs with SIA437DJ-T1-GE3 by Vishay Siliconix, a top-tier choice in Discrete Semiconductor Products. Specifically crafted for Transistors - FETs, MOSFETs - Single applications, this product offers superior power handling and energy efficiency. Key features include high voltage tolerance, minimal power loss, and robust durability, making it perfect for switching and amplification tasks. Whether for industrial machinery, renewable energy systems, or portable devices, SIA437DJ-T1-GE3 ensures reliable operation. Ready to integrate this component into your project? Submit an inquiry now for pricing and availability!
Specifications
- Product Status: Active
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 20 V
- Current - Continuous Drain (Id) @ 25°C: 29.7A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
- Rds On (Max) @ Id, Vgs: 14.5mOhm @ 8A, 4.5V
- Vgs(th) (Max) @ Id: 900mV @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 90 nC @ 8 V
- Vgs (Max): ±8V
- Input Capacitance (Ciss) (Max) @ Vds: 2340 pF @ 10 V
- FET Feature: -
- Power Dissipation (Max): 3.5W (Ta), 19W (Tc)
- Operating Temperature: -50°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PowerPAK® SC-70-6
- Package / Case: PowerPAK® SC-70-6
Related Products
Texas Instruments
CSD25201W15
Vishay Siliconix
SIHFR320-GE3
STMicroelectronics
STD130N4F6AG
IXYS
IXFR80N50P
Nexperia USA Inc.
BUK7Y7R2-60EX
Diotec Semiconductor
MMFTP84
Toshiba Semiconductor and Storage
TK4K1A60F,S4X
Rohm Semiconductor
R6047ENZ4C13
STMicroelectronics
STWA70N65DM6
Microchip Technology