SIDR680DP-T1-RE3
Vishay Siliconix
Vishay Siliconix
N-CHANNEL 80-V (D-S) MOSFET
$3.06
Available to order
Reference Price (USD)
1+
$3.06000
500+
$3.0294
1000+
$2.9988
1500+
$2.9682
2000+
$2.9376
2500+
$2.907
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Discover high-performance SIDR680DP-T1-RE3 from Vishay Siliconix, a leading solution in the Discrete Semiconductor Products category. Our Transistors - FETs, MOSFETs - Single are designed for efficiency and reliability, making them ideal for various electronic applications. These components feature low on-resistance, fast switching speeds, and excellent thermal performance, ensuring optimal functionality in power management and amplification circuits. Commonly used in automotive, industrial, and consumer electronics, SIDR680DP-T1-RE3 delivers consistent performance under demanding conditions. Interested in learning more? Contact us today for a detailed quote and technical support!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 80 V
- Current - Continuous Drain (Id) @ 25°C: 32.8A (Ta), 100A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
- Rds On (Max) @ Id, Vgs: 2.9mOhm @ 20A, 10V
- Vgs(th) (Max) @ Id: 3.4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 105 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 5150 pF @ 40 V
- FET Feature: -
- Power Dissipation (Max): 6.25W (Ta), 125W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PowerPAK® SO-8DC
- Package / Case: PowerPAK® SO-8
Related Products
STMicroelectronics
STF3LN80K5
Infineon Technologies
IRFI4321PBF
Texas Instruments
CSD25404Q3T
Fairchild Semiconductor
FDU8778
Infineon Technologies
IPD068N10N3GATMA1
Infineon Technologies
IRF7606TRPBF
onsemi
FQPF10N60C
Vishay Siliconix
SI7431DP-T1-GE3
Panjit International Inc.
PJD45N06A-AU_L2_000A1
onsemi