IRF7606TRPBF
Infineon Technologies
Infineon Technologies
MOSFET P-CH 30V 3.6A MICRO8
$0.91
Available to order
Reference Price (USD)
4,000+
$0.26318
8,000+
$0.24503
12,000+
$0.23595
28,000+
$0.23100
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Infineon Technologies presents IRF7606TRPBF, a high-performance Transistors - FETs, MOSFETs - Single in the Discrete Semiconductor Products category. Designed for efficiency, this component features minimal conduction losses and superior thermal performance, making it ideal for high-frequency applications. From industrial automation to smart home devices, IRF7606TRPBF delivers unmatched reliability. Get in touch today for technical specifications and purchasing options!
Specifications
- Product Status: Active
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30 V
- Current - Continuous Drain (Id) @ 25°C: 3.6A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Rds On (Max) @ Id, Vgs: 90mOhm @ 2.4A, 10V
- Vgs(th) (Max) @ Id: 1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 520 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 1.8W (Ta)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: Micro8™
- Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Related Products
onsemi
FQPF10N60C
Vishay Siliconix
SI7431DP-T1-GE3
Panjit International Inc.
PJD45N06A-AU_L2_000A1
onsemi
NDT01N60T1G
Toshiba Semiconductor and Storage
TK7A45DA(STA4,Q,M)
Vishay Siliconix
SI1032R-T1-GE3
Vishay Siliconix
SIR182DP-T1-RE3
Renesas Electronics America Inc
RJK0651DPB-00#J5
onsemi
NVTYS010N04CTWG
Rohm Semiconductor