SIHA21N65EF-E3
Vishay Siliconix
Vishay Siliconix
MOSFET N-CH 650V 21A TO220
$2.77
Available to order
Reference Price (USD)
1,000+
$2.75028
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Vishay Siliconix presents SIHA21N65EF-E3, a high-performance Transistors - FETs, MOSFETs - Single in the Discrete Semiconductor Products category. Designed for efficiency, this component features minimal conduction losses and superior thermal performance, making it ideal for high-frequency applications. From industrial automation to smart home devices, SIHA21N65EF-E3 delivers unmatched reliability. Get in touch today for technical specifications and purchasing options!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 650 V
- Current - Continuous Drain (Id) @ 25°C: 21A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 180mOhm @ 11A, 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 106 nC @ 10 V
- Vgs (Max): ±30V
- Input Capacitance (Ciss) (Max) @ Vds: 2322 pF @ 100 V
- FET Feature: -
- Power Dissipation (Max): 35W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220 Full Pack
- Package / Case: TO-220-3 Full Pack
Related Products
Infineon Technologies
IAUS200N08S5N023ATMA1
Alpha & Omega Semiconductor Inc.
AO4485
onsemi
NTHL060N090SC1
onsemi
MTSF2P03HDR2
Infineon Technologies
IPI80N04S403AKSA1
STMicroelectronics
STP45N40DM2AG
Infineon Technologies
IRF7854TRPBF
Diodes Incorporated
DMP6023LE-13
Taiwan Semiconductor Corporation
TSM60NC390CI C0G
Nexperia USA Inc.