SIHG11N80AE-GE3
Vishay Siliconix
Vishay Siliconix
MOSFET N-CH 800V 8A TO247AC
$2.89
Available to order
Reference Price (USD)
1+
$2.89000
500+
$2.8611
1000+
$2.8322
1500+
$2.8033
2000+
$2.7744
2500+
$2.7455
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
For cutting-edge Transistors - FETs, MOSFETs - Single solutions, choose SIHG11N80AE-GE3 by Vishay Siliconix. A key player in Discrete Semiconductor Products, this MOSFET boasts low RDS(on), high current capacity, and excellent switching characteristics. Its applications span across telecom infrastructure, medical devices, and consumer electronics. Elevate your designs with SIHG11N80AE-GE3 inquire now for more details!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 800 V
- Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 450mOhm @ 5.5A, 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V
- Vgs (Max): ±30V
- Input Capacitance (Ciss) (Max) @ Vds: 804 pF @ 100 V
- FET Feature: -
- Power Dissipation (Max): 78W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-247AC
- Package / Case: TO-247-3
Related Products
Infineon Technologies
IRFZ44VPBF
STMicroelectronics
STL10N65M2
Alpha & Omega Semiconductor Inc.
AOI538
NXP USA Inc.
BUK7507-55B,127
Vishay Siliconix
SI2323CDS-T1-BE3
onsemi
NVTYS004N03CLTWG
Toshiba Semiconductor and Storage
SSM3K37MFV,L3F
Diodes Incorporated
ZXMN6A08GQTC
STMicroelectronics
STB130N6F7
Infineon Technologies