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SSM3K37MFV,L3F

Toshiba Semiconductor and Storage
SSM3K37MFV,L3F Preview
Toshiba Semiconductor and Storage
MOSFET N-CH 20V 250MA VESM
$0.31
Available to order
Reference Price (USD)
8,000+
$0.04200
16,000+
$0.03570
24,000+
$0.03360
56,000+
$0.03150
200,000+
$0.02940
Exquisite packaging
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Specifications

  • Product Status: Active
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20 V
  • Current - Continuous Drain (Id) @ 25°C: 250mA (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
  • Rds On (Max) @ Id, Vgs: 2.2Ohm @ 100mA, 4.5V
  • Vgs(th) (Max) @ Id: 1V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Vgs (Max): ±10V
  • Input Capacitance (Ciss) (Max) @ Vds: 12 pF @ 10 V
  • FET Feature: -
  • Power Dissipation (Max): 150mW (Ta)
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: VESM
  • Package / Case: SOT-723

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