SIHG15N80AE-GE3
Vishay Siliconix
Vishay Siliconix
MOSFET N-CH 800V 13A TO247AC
$3.11
Available to order
Reference Price (USD)
1+
$3.11000
500+
$3.0789
1000+
$3.0478
1500+
$3.0167
2000+
$2.9856
2500+
$2.9545
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Boost your electronic applications with SIHG15N80AE-GE3, a reliable Transistors - FETs, MOSFETs - Single by Vishay Siliconix. As a leader in Discrete Semiconductor Products, we offer components with low gate charge, high breakdown voltage, and excellent switching performance. Whether for aerospace, robotics, or energy systems, SIHG15N80AE-GE3 meets the highest standards. Contact our team today for expert advice and competitive pricing!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 800 V
- Current - Continuous Drain (Id) @ 25°C: 13A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 350mOhm @ 7.5A, 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 53 nC @ 10 V
- Vgs (Max): ±30V
- Input Capacitance (Ciss) (Max) @ Vds: 1093 pF @ 100 V
- FET Feature: -
- Power Dissipation (Max): 156W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-247AC
- Package / Case: TO-247-3
Related Products
Nexperia USA Inc.
PSMN2R6-60PSQ
IXYS
IXTP50N25T
Alpha & Omega Semiconductor Inc.
AON3414
Diodes Incorporated
ZVNL110ASTZ
IXYS
IXTT110N10P
IXYS
IXTT60N20L2
Diodes Incorporated
DMN2300UFD-7
onsemi
2SK4066-1E
STMicroelectronics
STD4NK80Z-1
Renesas Electronics America Inc