SIHH24N65EF-T1-GE3
Vishay Siliconix
Vishay Siliconix
MOSFET N-CH 650V 23A PPAK 8 X 8
$5.12
Available to order
Reference Price (USD)
3,000+
$4.43586
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Discover SIHH24N65EF-T1-GE3, a versatile Transistors - FETs, MOSFETs - Single solution from Vishay Siliconix, a trusted name in Discrete Semiconductor Products. This MOSFET combines high power density with low on-resistance, perfect for compact and energy-efficient designs. Applications include solar inverters, electric vehicles, and wearable technology. Interested in this innovative component? Send us your inquiry now for more information!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 650 V
- Current - Continuous Drain (Id) @ 25°C: 23A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 158mOhm @ 12A, 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
- Vgs (Max): ±30V
- Input Capacitance (Ciss) (Max) @ Vds: 2780 pF @ 100 V
- FET Feature: -
- Power Dissipation (Max): 202W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PowerPAK® 8 x 8
- Package / Case: 8-PowerTDFN
Related Products
Diodes Incorporated
ZXMN3B14FTA
Vishay Siliconix
SQJA42EP-T1_GE3
Micro Commercial Co
SI2301-TP
Diodes Incorporated
DMG3404L-7
onsemi
NVD6416ANLT4G-001
onsemi
FDMC8462
Fairchild Semiconductor
FDS4070N7
Renesas Electronics America Inc
NP100P04PLG-E1-AY
NTE Electronics, Inc
NTE2991
IXYS