SIHP35N60EF-GE3
Vishay Siliconix
Vishay Siliconix
MOSFET N-CH 600V 32A TO220AB
$6.59
Available to order
Reference Price (USD)
1+
$6.59000
500+
$6.5241
1000+
$6.4582
1500+
$6.3923
2000+
$6.3264
2500+
$6.2605
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Enhance your circuit performance with SIHP35N60EF-GE3, a premium Transistors - FETs, MOSFETs - Single from Vishay Siliconix. As part of the Discrete Semiconductor Products lineup, this MOSFET excels in delivering high-speed switching and low power consumption. Its advanced design reduces heat generation and improves efficiency, suitable for power supplies, motor controls, and LED lighting. Trust SIHP35N60EF-GE3 for consistent quality and long-lasting performance. For bulk orders or custom specifications, reach out to our sales team today!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 600 V
- Current - Continuous Drain (Id) @ 25°C: 32A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 97mOhm @ 17A, 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 134 nC @ 10 V
- Vgs (Max): ±30V
- Input Capacitance (Ciss) (Max) @ Vds: 2568 pF @ 100 V
- FET Feature: -
- Power Dissipation (Max): 250W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220AB
- Package / Case: TO-220-3
Related Products
Infineon Technologies
IRF7469TRPBF
Harris Corporation
RFD10N05SM
Diodes Incorporated
DMP2110UW-7
Vishay Siliconix
IRF9530STRLPBF
Renesas Electronics America Inc
UPA2800T1L-E1-AY
Renesas Electronics America Inc
RJK0701DPP-E0#T2
Vishay Siliconix
SUD50P10-43L-E3
onsemi
NTMFS6H801NT1G
Vishay Siliconix
SIR572DP-T1-RE3
IXYS