SUD50P10-43L-E3
Vishay Siliconix
Vishay Siliconix
MOSFET P-CH 100V 37.1A TO252
$2.78
Available to order
Reference Price (USD)
2,000+
$1.36310
6,000+
$1.31580
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Discover SUD50P10-43L-E3, a versatile Transistors - FETs, MOSFETs - Single solution from Vishay Siliconix, a trusted name in Discrete Semiconductor Products. This MOSFET combines high power density with low on-resistance, perfect for compact and energy-efficient designs. Applications include solar inverters, electric vehicles, and wearable technology. Interested in this innovative component? Send us your inquiry now for more information!
Specifications
- Product Status: Active
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100 V
- Current - Continuous Drain (Id) @ 25°C: 37.1A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Rds On (Max) @ Id, Vgs: 43mOhm @ 9.2A, 10V
- Vgs(th) (Max) @ Id: 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 160 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 4600 pF @ 50 V
- FET Feature: -
- Power Dissipation (Max): 8.3W (Ta), 136W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TO-252AA
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Related Products
onsemi
NTMFS6H801NT1G
Vishay Siliconix
SIR572DP-T1-RE3
IXYS
IXTA230N075T2-7
IXYS
IXTA3N100D2
Vishay Siliconix
SI4838DY-T1-GE3
onsemi
MMBF0201NLT1G
Vishay Siliconix
SIR167DP-T1-GE3
onsemi
NTMFS6H852NLT1G
Vishay Siliconix
SIRA72DP-T1-GE3
Infineon Technologies