SIJ128LDP-T1-GE3
Vishay Siliconix
Vishay Siliconix
MOSFET N-CH 80V 10.2A/25.5A PPAK
$1.68
Available to order
Reference Price (USD)
1+
$1.68000
500+
$1.6632
1000+
$1.6464
1500+
$1.6296
2000+
$1.6128
2500+
$1.596
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Upgrade your electronic designs with SIJ128LDP-T1-GE3 by Vishay Siliconix, a top-tier choice in Discrete Semiconductor Products. Specifically crafted for Transistors - FETs, MOSFETs - Single applications, this product offers superior power handling and energy efficiency. Key features include high voltage tolerance, minimal power loss, and robust durability, making it perfect for switching and amplification tasks. Whether for industrial machinery, renewable energy systems, or portable devices, SIJ128LDP-T1-GE3 ensures reliable operation. Ready to integrate this component into your project? Submit an inquiry now for pricing and availability!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 80 V
- Current - Continuous Drain (Id) @ 25°C: 10.2A (Ta), 25.5A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Rds On (Max) @ Id, Vgs: 15.6mOhm @ 10A, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 1250 pF @ 40 V
- FET Feature: -
- Power Dissipation (Max): 3.6W (Ta), 22.3W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PowerPAK® SO-8
- Package / Case: PowerPAK® SO-8
Related Products
Infineon Technologies
IPD60R600P6ATMA1
Infineon Technologies
IRFB4610PBF
Vishay Siliconix
SIHB33N60E-GE3
Panjit International Inc.
PJD4NA50A_L2_00001
Vishay Siliconix
SIHP21N80AEF-GE3
Infineon Technologies
AUIRFR4620TRL
onsemi
RFP50N06
Diodes Incorporated
DMN3051L-7
Infineon Technologies
SPW17N80C3FKSA1
Vishay Siliconix