SIR512DP-T1-RE3
Vishay Siliconix
Vishay Siliconix
N-CHANNEL 100 V (D-S) MOSFET POW
$2.23
Available to order
Reference Price (USD)
1+
$2.23000
500+
$2.2077
1000+
$2.1854
1500+
$2.1631
2000+
$2.1408
2500+
$2.1185
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
For cutting-edge Transistors - FETs, MOSFETs - Single solutions, choose SIR512DP-T1-RE3 by Vishay Siliconix. A key player in Discrete Semiconductor Products, this MOSFET boasts low RDS(on), high current capacity, and excellent switching characteristics. Its applications span across telecom infrastructure, medical devices, and consumer electronics. Elevate your designs with SIR512DP-T1-RE3 inquire now for more details!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100 V
- Current - Continuous Drain (Id) @ 25°C: 25.1A (Ta), 100A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
- Rds On (Max) @ Id, Vgs: 4.5mOhm @ 20A, 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 62 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 3400 pF @ 50 V
- FET Feature: -
- Power Dissipation (Max): 6W (Ta), 96.2W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PowerPAK® SO-8
- Package / Case: PowerPAK® SO-8
Related Products
Nexperia USA Inc.
PXP011-20QXJ
NXP USA Inc.
BUK9E2R3-40E,127
Infineon Technologies
BUZ111SL-E3045A
Infineon Technologies
IPD65R660CFDATMA2
Fairchild Semiconductor
FQPF9N50T
Infineon Technologies
IPL65R650C6SATMA1
Vishay Siliconix
SI2301BDS-T1-GE3
NXP USA Inc.
PHB110NQ08T,118
onsemi
FSS145-TL-E
onsemi