SIR516DP-T1-RE3
Vishay Siliconix
Vishay Siliconix
N-CHANNEL 100 V (D-S) MOSFET POW
$1.91
Available to order
Reference Price (USD)
1+
$1.91000
500+
$1.8909
1000+
$1.8718
1500+
$1.8527
2000+
$1.8336
2500+
$1.8145
Exquisite packaging
Discount
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Experience the power of SIR516DP-T1-RE3, a premium Transistors - FETs, MOSFETs - Single from Vishay Siliconix. Part of the Discrete Semiconductor Products family, this MOSFET is tailored for high-efficiency power conversion and signal amplification. With its rugged construction and advanced technology, SIR516DP-T1-RE3 is suited for harsh environments and high-demand applications. Request a quote now to secure this essential component for your projects!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100 V
- Current - Continuous Drain (Id) @ 25°C: 16.8A (Ta), 63.7A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
- Rds On (Max) @ Id, Vgs: 8mOhm @ 10A, 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 1920 pF @ 50 V
- FET Feature: -
- Power Dissipation (Max): 5W (Ta), 71.4W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PowerPAK® SO-8
- Package / Case: PowerPAK® SO-8
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