SIR616DP-T1-GE3
Vishay Siliconix
Vishay Siliconix
MOSFET N-CH 200V 20.2A PPAK SO-8
$1.55
Available to order
Reference Price (USD)
3,000+
$0.70192
6,000+
$0.66896
15,000+
$0.64542
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Discover SIR616DP-T1-GE3, a versatile Transistors - FETs, MOSFETs - Single solution from Vishay Siliconix, a trusted name in Discrete Semiconductor Products. This MOSFET combines high power density with low on-resistance, perfect for compact and energy-efficient designs. Applications include solar inverters, electric vehicles, and wearable technology. Interested in this innovative component? Send us your inquiry now for more information!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 200 V
- Current - Continuous Drain (Id) @ 25°C: 20.2A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
- Rds On (Max) @ Id, Vgs: 50.5mOhm @ 10A, 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 7.5 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 1450 pF @ 100 V
- FET Feature: -
- Power Dissipation (Max): 52W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PowerPAK® SO-8
- Package / Case: PowerPAK® SO-8
Related Products
onsemi
FQPF16N25C
Vishay Siliconix
SIR570DP-T1-RE3
Toshiba Semiconductor and Storage
TK62Z60X,S1F
STMicroelectronics
STB34NM60N
Infineon Technologies
BUZ111S
Renesas Electronics America Inc
UPA620TT-E1-A
Rectron USA
RM80N60DF
Alpha & Omega Semiconductor Inc.
AOI442
STMicroelectronics
STP6N62K3
onsemi