SIR622DP-T1-GE3
Vishay Siliconix
Vishay Siliconix
MOSFET N-CH 150V 51.6A PPAK SO-8
$1.78
Available to order
Reference Price (USD)
3,000+
$0.80360
6,000+
$0.76587
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
SIR622DP-T1-GE3 by Vishay Siliconix is a standout in the Discrete Semiconductor Products market, specifically for Transistors - FETs, MOSFETs - Single applications. Engineered for precision, this MOSFET offers exceptional gate control, low leakage current, and high power density. Ideal for use in audio amplifiers, DC-DC converters, and battery management systems, SIR622DP-T1-GE3 ensures top-tier performance. Don t miss out on this versatile component request a sample or quote now!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 150 V
- Current - Continuous Drain (Id) @ 25°C: 51.6A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
- Rds On (Max) @ Id, Vgs: 17.7mOhm @ 20A, 10V
- Vgs(th) (Max) @ Id: 4.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 7.5 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 1516 pF @ 75 V
- FET Feature: -
- Power Dissipation (Max): 104W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PowerPAK® SO-8
- Package / Case: PowerPAK® SO-8
Related Products
Rohm Semiconductor
RZL025P01TR
Rohm Semiconductor
R6004KNX
Diodes Incorporated
ZXMP2120G4TA
IXYS
IXTA26P20P-TRL
NXP USA Inc.
BUK9E1R6-30E,127
onsemi
FDMC7572S
onsemi
FDS8840NZ
Vishay Siliconix
IRFBC30ALPBF
STMicroelectronics
STF7NM80
UnitedSiC