SIR632DP-T1-RE3
Vishay Siliconix
Vishay Siliconix
MOSFET N-CH 150V 29A PPAK SO-8
$1.46
Available to order
Reference Price (USD)
3,000+
$0.65764
6,000+
$0.62676
15,000+
$0.60471
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Discover high-performance SIR632DP-T1-RE3 from Vishay Siliconix, a leading solution in the Discrete Semiconductor Products category. Our Transistors - FETs, MOSFETs - Single are designed for efficiency and reliability, making them ideal for various electronic applications. These components feature low on-resistance, fast switching speeds, and excellent thermal performance, ensuring optimal functionality in power management and amplification circuits. Commonly used in automotive, industrial, and consumer electronics, SIR632DP-T1-RE3 delivers consistent performance under demanding conditions. Interested in learning more? Contact us today for a detailed quote and technical support!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 150 V
- Current - Continuous Drain (Id) @ 25°C: 29A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
- Rds On (Max) @ Id, Vgs: 34.5mOhm @ 10A, 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 7.5 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 740 pF @ 75 V
- FET Feature: -
- Power Dissipation (Max): 69.5W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PowerPAK® SO-8
- Package / Case: PowerPAK® SO-8
Related Products
onsemi
NVMFS5C604NLWFAFT3G
Diodes Incorporated
DMG2305UXQ-13
STMicroelectronics
STD180N4F6
Vishay Siliconix
SIA427DJ-T1-GE3
STMicroelectronics
STL24N60M2
onsemi
FDN537N
Microchip Technology
APT38M50J
STMicroelectronics
STP13N60M2
Infineon Technologies
SPP20N60S5XKSA1
onsemi