SIA427DJ-T1-GE3
Vishay Siliconix
Vishay Siliconix
MOSFET P-CH 8V 12A PPAK SC70-6
$0.60
Available to order
Reference Price (USD)
3,000+
$0.22563
6,000+
$0.21188
15,000+
$0.19813
30,000+
$0.18850
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Optimize your electronic systems with SIA427DJ-T1-GE3, a high-quality Transistors - FETs, MOSFETs - Single from Vishay Siliconix. This Discrete Semiconductor Products component is built for reliability, featuring enhanced thermal stability and fast response times. Perfect for automotive electronics, power tools, and IoT devices, SIA427DJ-T1-GE3 provides efficient power management solutions. Contact us today to discuss your requirements and place an order!
Specifications
- Product Status: Active
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 8 V
- Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V
- Rds On (Max) @ Id, Vgs: 16mOhm @ 8.2A, 4.5V
- Vgs(th) (Max) @ Id: 800mV @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 5 V
- Vgs (Max): ±5V
- Input Capacitance (Ciss) (Max) @ Vds: 2300 pF @ 4 V
- FET Feature: -
- Power Dissipation (Max): 3.5W (Ta), 19W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PowerPAK® SC-70-6
- Package / Case: PowerPAK® SC-70-6
Related Products
STMicroelectronics
STL24N60M2
onsemi
FDN537N
Microchip Technology
APT38M50J
STMicroelectronics
STP13N60M2
Infineon Technologies
SPP20N60S5XKSA1
onsemi
NTHL020N120SC1
onsemi
HUF75542P3
Infineon Technologies
IST019N08NM5AUMA1
Fairchild Semiconductor
FQB25N33TM-F085
STMicroelectronics