SIRB40DP-T1-GE3
Vishay Siliconix
Vishay Siliconix
MOSFET 2 N-CH 40V POWERPAK SO8
$1.47
Available to order
Reference Price (USD)
3,000+
$0.66420
6,000+
$0.63302
15,000+
$0.61074
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Discover high-performance SIRB40DP-T1-GE3 from Vishay Siliconix, a leading solution in the Discrete Semiconductor Products category for Transistors - FETs, MOSFETs - Arrays. These components are designed for efficiency and reliability, making them ideal for various electronic applications. Features include low power consumption, high switching speed, and excellent thermal stability. Perfect for power management, amplification, and switching circuits. Contact us today for a quote and let Vishay Siliconix s SIRB40DP-T1-GE3 enhance your projects with superior quality and performance.
Specifications
- Product Status: Active
- FET Type: 2 N-Channel (Dual)
- FET Feature: Standard
- Drain to Source Voltage (Vdss): 40V
- Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
- Rds On (Max) @ Id, Vgs: 3.25mOhm @ 10A, 10V
- Vgs(th) (Max) @ Id: 2.4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 45nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 4290pF @ 20V
- Power - Max: 46.2W
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: PowerPAK® SO-8 Dual
- Supplier Device Package: PowerPAK® SO-8 Dual
Related Products
Alpha & Omega Semiconductor Inc.
AON6946
Vishay Siliconix
SI7980DP-T1-GE3
Nexperia USA Inc.
NX3008NBKS,115
onsemi
FDS3992
Microchip Technology
APTC60AM35SCTG
Diodes Incorporated
DMG1023UVQ-7
Nexperia USA Inc.
PMDT290UNE,115
Nexperia USA Inc.
PMCXB1000UEZ
Wolfspeed, Inc.
WAS530M12BM3
Toshiba Semiconductor and Storage