SIZ200DT-T1-GE3
Vishay Siliconix
Vishay Siliconix
MOSFET N-CH DUAL 30V
$1.08
Available to order
Reference Price (USD)
3,000+
$0.48708
6,000+
$0.46421
15,000+
$0.44788
Exquisite packaging
Discount
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The SIZ200DT-T1-GE3 by Vishay Siliconix is a standout in the Discrete Semiconductor Products category, specifically for Transistors - FETs, MOSFETs - Arrays. Engineered for excellence, these components offer unmatched reliability and performance. Features such as high voltage tolerance, low gate charge, and superior thermal management make them a preferred choice. Applications range from industrial automation to consumer electronics. Don t miss out on the opportunity to integrate SIZ200DT-T1-GE3 into your systems contact us for more details and pricing.
Specifications
- Product Status: Active
- FET Type: 2 N-Channel (Dual)
- FET Feature: Standard
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 22A (Ta), 61A (Tc), 22A (Ta), 60A (Tc)
- Rds On (Max) @ Id, Vgs: 5.5mOhm @ 10A, 10V, 5.8mOhm @ 10A, 10V
- Vgs(th) (Max) @ Id: 2.4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 28nC @ 10V, 30nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 1510pF @ 15V, 1600pF @ 15V
- Power - Max: 4.3W (Ta), 33W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-PowerWDFN
- Supplier Device Package: 8-PowerPair® (3.3x3.3)
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