Shopping cart

Subtotal: $0.00

SIZ270DT-T1-GE3

Vishay Siliconix
SIZ270DT-T1-GE3 Preview
Vishay Siliconix
DUAL N-CHANNEL 100-V (D-S) MOSFE
$1.48
Available to order
Reference Price (USD)
1+
$1.48000
500+
$1.4652
1000+
$1.4504
1500+
$1.4356
2000+
$1.4208
2500+
$1.406
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram

Specifications

  • Product Status: Active
  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 100V
  • Current - Continuous Drain (Id) @ 25°C: 7.1A (Ta), 19.5A (Tc), 6.9A (Ta), 19.1A (Tc)
  • Rds On (Max) @ Id, Vgs: 37.7mOhm @ 7A, 10V, 39.4mOhm @ 7A, 10V
  • Vgs(th) (Max) @ Id: 2.4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 27nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 860pF @ 50V, 845pF @ 50V
  • Power - Max: 4.3W (Ta), 33W (Tc)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-PowerWDFN
  • Supplier Device Package: 8-PowerPair® (3.3x3.3)

Related Products

Vishay Siliconix

SI4202DY-T1-GE3

Diodes Incorporated

ZXMN3A06DN8TA

Rohm Semiconductor

QH8JB5TCR

Vishay Siliconix

SI5948DU-T1-GE3

Nexperia USA Inc.

BUK9K17-60EX

Fairchild Semiconductor

RF1K4909096

Analog Devices Inc./Maxim Integrated

MAX5078BATT+

Rohm Semiconductor

EM6K31T2R

Vishay Siliconix

SQJ974EP-T1_BE3

Top