ZXMN3A06DN8TA
Diodes Incorporated
Diodes Incorporated
MOSFET 2N-CH 30V 4.9A 8-SOIC
$1.26
Available to order
Reference Price (USD)
500+
$0.75570
1,000+
$0.61050
2,500+
$0.57420
5,000+
$0.54879
12,500+
$0.53064
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The ZXMN3A06DN8TA from Diodes Incorporated is a premium option in the Discrete Semiconductor Products category, specializing in Transistors - FETs, MOSFETs - Arrays. With advanced features such as high-frequency operation, low leakage current, and excellent ESD protection, these components are perfect for demanding electronic applications. Whether you re working on telecommunications, computing, or medical devices, ZXMN3A06DN8TA offers the reliability you need. Contact us now to discuss how we can support your project requirements with Diodes Incorporated s cutting-edge solutions.
Specifications
- Product Status: Active
- FET Type: 2 N-Channel (Dual)
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 4.9A
- Rds On (Max) @ Id, Vgs: 35mOhm @ 9A, 10V
- Vgs(th) (Max) @ Id: 1V @ 250µA (Min)
- Gate Charge (Qg) (Max) @ Vgs: 17.5nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 796pF @ 25V
- Power - Max: 1.8W
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: 8-SO
Related Products
Rohm Semiconductor
QH8JB5TCR
Vishay Siliconix
SI5948DU-T1-GE3
Nexperia USA Inc.
BUK9K17-60EX
Fairchild Semiconductor
RF1K4909096
Analog Devices Inc./Maxim Integrated
MAX5078BATT+
Rohm Semiconductor
EM6K31T2R
Vishay Siliconix
SQJ974EP-T1_BE3
onsemi
FDMS7620S
Toshiba Semiconductor and Storage
SSM6L09FUTE85LF
Vishay Siliconix