SIZ340ADT-T1-GE3

Vishay Siliconix

Manufacturer

Vishay Siliconix

Description:

DUAL N-CHANNEL 30-V (D-S) MOSFET

Datasheet:

SIZ340ADT-T1-GE3 Datasheet

$1.16

Available to order

Reference Price (USD)

$1.16000

500+

$1.1484

1000+

$1.1368

1500+

$1.1252

2000+

$1.1136

2500+

$1.102

Exquisite packaging

Discount

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Optimize your electronic circuits with Vishay Siliconix s SIZ340ADT-T1-GE3, a key player in the Discrete Semiconductor Products category for Transistors - FETs, MOSFETs - Arrays. These components are celebrated for their high efficiency, compact design, and long-lasting performance. Key features include fast switching, low threshold voltage, and superior thermal conductivity. Ideal for applications in power converters, RF amplifiers, and battery management systems. Reach out to us today to explore how SIZ340ADT-T1-GE3 can elevate your design and operational efficiency.

Specifications

Product Status: Active
FET Type: 2 N-Channel (Dual)
FET Feature: Standard
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 15.7A (Ta), 33.4A (Tc), 25.4A (Ta), 69.7A (Tc)
Rds On (Max) @ Id, Vgs: 9.4mOhm @ 10A, 10V, 4.29mOhm @ 20A, 10V
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 12.2nC @ 10V, 27.9nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 580pF @ 15V, 1290pF @ 15V
Power - Max: 3.7W (Ta), 16.7W (Tc), 4.2W (Ta), 31W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerWDFN
Supplier Device Package: 8-Power33 (3x3)