SIZ342ADT-T1-GE3
Vishay Siliconix
Vishay Siliconix
MOSFET DL N-CH 30V PPAIR 3 X 3
$0.90
Available to order
Reference Price (USD)
1+
$0.90000
500+
$0.891
1000+
$0.882
1500+
$0.873
2000+
$0.864
2500+
$0.855
Exquisite packaging
Discount
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Discover high-performance SIZ342ADT-T1-GE3 from Vishay Siliconix, a leading solution in the Discrete Semiconductor Products category for Transistors - FETs, MOSFETs - Arrays. These components are designed for efficiency and reliability, making them ideal for various electronic applications. Features include low power consumption, high switching speed, and excellent thermal stability. Perfect for power management, amplification, and switching circuits. Contact us today for a quote and let Vishay Siliconix s SIZ342ADT-T1-GE3 enhance your projects with superior quality and performance.
Specifications
- Product Status: Active
- FET Type: 2 N-Channel (Dual)
- FET Feature: Standard
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 15.7A (Ta), 33.4A (Tc)
- Rds On (Max) @ Id, Vgs: 9.4mOhm @ 10A, 10V
- Vgs(th) (Max) @ Id: 2.4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 12.2nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 580pF @ 15V
- Power - Max: 3.7W (Ta), 16.7W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-PowerWDFN
- Supplier Device Package: 8-Power33 (3x3)
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