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SIZF916DT-T1-GE3

Vishay Siliconix
SIZF916DT-T1-GE3 Preview
Vishay Siliconix
MOSFET N-CH DUAL 30V
$1.72
Available to order
Reference Price (USD)
3,000+
$0.72765
6,000+
$0.69127
15,000+
$0.66528
Exquisite packaging
Discount
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Specifications

  • Product Status: Active
  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 23A (Ta), 40A (Tc)
  • Rds On (Max) @ Id, Vgs: 4mOhm @ 10A, 10V, 1.25mOhm @ 10A, 10V
  • Vgs(th) (Max) @ Id: 2.4V @ 250µA, 2.2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 22nC @ 10V, 95nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1060pF @ 15V, 4320pF @ 15V
  • Power - Max: 3.4W (Ta), 26.6W (Tc), 4W (Ta), 60W (Tc)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-PowerWDFN
  • Supplier Device Package: 8-PowerPair® (6x5)

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