SIZF918DT-T1-GE3
Vishay Siliconix
Vishay Siliconix
MOSFET DUAL N-CH 30V POWERPAIR 6
$0.76
Available to order
Reference Price (USD)
1+
$0.75735
500+
$0.7497765
1000+
$0.742203
1500+
$0.7346295
2000+
$0.727056
2500+
$0.7194825
Exquisite packaging
Discount
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Discover high-performance SIZF918DT-T1-GE3 from Vishay Siliconix, a leading solution in the Discrete Semiconductor Products category for Transistors - FETs, MOSFETs - Arrays. These components are designed for efficiency and reliability, making them ideal for various electronic applications. Features include low power consumption, high switching speed, and excellent thermal stability. Perfect for power management, amplification, and switching circuits. Contact us today for a quote and let Vishay Siliconix s SIZF918DT-T1-GE3 enhance your projects with superior quality and performance.
Specifications
- Product Status: Active
- FET Type: 2 N-Channel (Dual), Schottky
- FET Feature: Standard
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 23A (Ta), 40A (Tc), 35A (Ta), 60A (Tc)
- Rds On (Max) @ Id, Vgs: 4mOhm @ 10A, 10V, 1.9mOhm @ 10A, 10V
- Vgs(th) (Max) @ Id: 2.4V @ 250µA, 2.3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 22nC @ 10V, 56nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 1060pF @ 15V, 2650pF @ 15V
- Power - Max: 3.4W (Ta), 26.6W (Tc), 3.7W (Ta), 50W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-PowerWDFN
- Supplier Device Package: 8-PowerPair® (6x5)
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Vishay Siliconix