SP8M10FU6TB
Rohm Semiconductor
Rohm Semiconductor
MOSFET N/P-CH 30V 7A/4.5A 8SOIC
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The SP8M10FU6TB from Rohm Semiconductor is a premium option in the Discrete Semiconductor Products category, specializing in Transistors - FETs, MOSFETs - Arrays. With advanced features such as high-frequency operation, low leakage current, and excellent ESD protection, these components are perfect for demanding electronic applications. Whether you re working on telecommunications, computing, or medical devices, SP8M10FU6TB offers the reliability you need. Contact us now to discuss how we can support your project requirements with Rohm Semiconductor s cutting-edge solutions.
Specifications
- Product Status: Obsolete
- FET Type: N and P-Channel
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 7A, 4.5A
- Rds On (Max) @ Id, Vgs: 24mOhm @ 7A, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 11.8nC @ 5V
- Input Capacitance (Ciss) (Max) @ Vds: 600pF @ 10V
- Power - Max: 2W
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: 8-SOP
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