SPB20N60C3ATMA1
Infineon Technologies
Infineon Technologies
MOSFET N-CH 650V 20.7A TO263-3
$7.20
Available to order
Reference Price (USD)
1,000+
$2.73812
2,000+
$2.60122
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Upgrade your electronic designs with SPB20N60C3ATMA1 by Infineon Technologies, a top-tier choice in Discrete Semiconductor Products. Specifically crafted for Transistors - FETs, MOSFETs - Single applications, this product offers superior power handling and energy efficiency. Key features include high voltage tolerance, minimal power loss, and robust durability, making it perfect for switching and amplification tasks. Whether for industrial machinery, renewable energy systems, or portable devices, SPB20N60C3ATMA1 ensures reliable operation. Ready to integrate this component into your project? Submit an inquiry now for pricing and availability!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 650 V
- Current - Continuous Drain (Id) @ 25°C: 20.7A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 190mOhm @ 13.1A, 10V
- Vgs(th) (Max) @ Id: 3.9V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 114 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 2400 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 208W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-TO263-3-2
- Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Related Products
Infineon Technologies
IPB65R190C7ATMA2
Nexperia USA Inc.
PXN6R2-25QLJ
Infineon Technologies
SPD02N50C3BTMA1
Infineon Technologies
IRFP7430PBF
STMicroelectronics
STF18NM60N
onsemi
NTR4101PT1G
Infineon Technologies
IRFR6215TRLPBF
Panjit International Inc.
PJL9426_R2_00001
Rohm Semiconductor
RS1E240BNTB
onsemi