NTMFS0D55N03CGT1G
onsemi

onsemi
WIDE SOA
$2.94
Available to order
Reference Price (USD)
1+
$2.93832
500+
$2.9089368
1000+
$2.8795536
1500+
$2.8501704
2000+
$2.8207872
2500+
$2.791404
Exquisite packaging
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Upgrade your electronic designs with NTMFS0D55N03CGT1G by onsemi, a top-tier choice in Discrete Semiconductor Products. Specifically crafted for Transistors - FETs, MOSFETs - Single applications, this product offers superior power handling and energy efficiency. Key features include high voltage tolerance, minimal power loss, and robust durability, making it perfect for switching and amplification tasks. Whether for industrial machinery, renewable energy systems, or portable devices, NTMFS0D55N03CGT1G ensures reliable operation. Ready to integrate this component into your project? Submit an inquiry now for pricing and availability!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30 V
- Current - Continuous Drain (Id) @ 25°C: 35A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 580µOhm @ 30A, 10V
- Vgs(th) (Max) @ Id: 2.2V @ 330µA
- Gate Charge (Qg) (Max) @ Vgs: 224.9 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 18500 pF @ 15 V
- FET Feature: -
- Power Dissipation (Max): 1.1W (Ta)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 5-DFN (5x6) (8-SOFL)
- Package / Case: 8-PowerTDFN, 5 Leads