SPP17N80C3XKSA1
Infineon Technologies
Infineon Technologies
MOSFET N-CH 800V 17A TO220-3
$5.94
Available to order
Reference Price (USD)
1+
$5.29000
10+
$4.75500
100+
$3.95430
500+
$3.26046
1,000+
$2.79793
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Enhance your circuit performance with SPP17N80C3XKSA1, a premium Transistors - FETs, MOSFETs - Single from Infineon Technologies. As part of the Discrete Semiconductor Products lineup, this MOSFET excels in delivering high-speed switching and low power consumption. Its advanced design reduces heat generation and improves efficiency, suitable for power supplies, motor controls, and LED lighting. Trust SPP17N80C3XKSA1 for consistent quality and long-lasting performance. For bulk orders or custom specifications, reach out to our sales team today!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 800 V
- Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 290mOhm @ 11A, 10V
- Vgs(th) (Max) @ Id: 3.9V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 177 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 2320 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 208W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: PG-TO220-3-1
- Package / Case: TO-220-3
Related Products
IXYS
IXFK120N30P3
Texas Instruments
CSD13201W10
onsemi
FDS6680AS
Infineon Technologies
IPB067N08N3GATMA1
Diodes Incorporated
DMN3066LQ-7
onsemi
FDMS7694
STMicroelectronics
STP57N65M5
Infineon Technologies
IPI65R310CFD
STMicroelectronics
STD15P6F6AG
Yangzhou Yangjie Electronic Technology Co.,Ltd