SPW11N60CFDFKSA1
Infineon Technologies
Infineon Technologies
MOSFET N-CH 650V 11A TO247-3
$1.74
Available to order
Reference Price (USD)
1+
$1.74000
500+
$1.7226
1000+
$1.7052
1500+
$1.6878
2000+
$1.6704
2500+
$1.653
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Upgrade your electronic designs with SPW11N60CFDFKSA1 by Infineon Technologies, a top-tier choice in Discrete Semiconductor Products. Specifically crafted for Transistors - FETs, MOSFETs - Single applications, this product offers superior power handling and energy efficiency. Key features include high voltage tolerance, minimal power loss, and robust durability, making it perfect for switching and amplification tasks. Whether for industrial machinery, renewable energy systems, or portable devices, SPW11N60CFDFKSA1 ensures reliable operation. Ready to integrate this component into your project? Submit an inquiry now for pricing and availability!
Specifications
- Product Status: Obsolete
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 650 V
- Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 440mOhm @ 7A, 10V
- Vgs(th) (Max) @ Id: 5V @ 500µA
- Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 125W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: PG-TO247-3-1
- Package / Case: TO-247-3
Related Products
onsemi
NTK3139PT1G
STMicroelectronics
STB13NK60ZT4
onsemi
NTMFS4835NT1G
Goford Semiconductor
GT100N12M
Vishay Siliconix
SIHH11N60E-T1-GE3
onsemi
FDPF20N50FT
NXP USA Inc.
BUK764R3-40B,118
IXYS
IXFN44N100P
STMicroelectronics
STP60NF10
Vishay Siliconix