SPW55N80C3FKSA1
Infineon Technologies
Infineon Technologies
MOSFET N-CH 800V 54.9A TO247-3
$17.92
Available to order
Reference Price (USD)
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$18.22000
10+
$16.67900
240+
$14.37633
720+
$12.45715
Exquisite packaging
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For cutting-edge Transistors - FETs, MOSFETs - Single solutions, choose SPW55N80C3FKSA1 by Infineon Technologies. A key player in Discrete Semiconductor Products, this MOSFET boasts low RDS(on), high current capacity, and excellent switching characteristics. Its applications span across telecom infrastructure, medical devices, and consumer electronics. Elevate your designs with SPW55N80C3FKSA1 inquire now for more details!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 800 V
- Current - Continuous Drain (Id) @ 25°C: 54.9A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 85mOhm @ 32.6A, 10V
- Vgs(th) (Max) @ Id: 3.9V @ 3.3mA
- Gate Charge (Qg) (Max) @ Vgs: 288 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 7520 pF @ 100 V
- FET Feature: -
- Power Dissipation (Max): 500W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: PG-TO247-3
- Package / Case: TO-247-3
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