SQM100N02-3M5L_GE3
Vishay Siliconix
Vishay Siliconix
MOSFET N-CH 20V 100A TO263
$2.59
Available to order
Reference Price (USD)
800+
$1.14708
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Experience the power of SQM100N02-3M5L_GE3, a premium Transistors - FETs, MOSFETs - Single from Vishay Siliconix. Part of the Discrete Semiconductor Products family, this MOSFET is tailored for high-efficiency power conversion and signal amplification. With its rugged construction and advanced technology, SQM100N02-3M5L_GE3 is suited for harsh environments and high-demand applications. Request a quote now to secure this essential component for your projects!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 20 V
- Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Rds On (Max) @ Id, Vgs: 3.5mOhm @ 30A, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 5500 pF @ 10 V
- FET Feature: -
- Power Dissipation (Max): 150W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TO-263 (D²Pak)
- Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Related Products
onsemi
NVMFS5C466NLT1G
onsemi
NVMFS6H824NWFT1G
Vishay Siliconix
IRF830APBF
onsemi
NTMFS4C024NT3G
onsemi
FDC634P
Nexperia USA Inc.
PMPB85ENEA/FX
Rectron USA
RM100N30DF
Toshiba Semiconductor and Storage
TK25N60X,S1F
onsemi
MTB30P06V
Alpha & Omega Semiconductor Inc.