SSM3J358R,LF
Toshiba Semiconductor and Storage
Toshiba Semiconductor and Storage
MOSFET P-CH 20V 6A SOT23F
$0.49
Available to order
Reference Price (USD)
3,000+
$0.09900
6,000+
$0.09350
15,000+
$0.08525
30,000+
$0.07975
75,000+
$0.07700
Exquisite packaging
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Discover SSM3J358R,LF, a versatile Transistors - FETs, MOSFETs - Single solution from Toshiba Semiconductor and Storage, a trusted name in Discrete Semiconductor Products. This MOSFET combines high power density with low on-resistance, perfect for compact and energy-efficient designs. Applications include solar inverters, electric vehicles, and wearable technology. Interested in this innovative component? Send us your inquiry now for more information!
Specifications
- Product Status: Active
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 20 V
- Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 1.8V, 8V
- Rds On (Max) @ Id, Vgs: 22.1mOhm @ 6A, 8V
- Vgs(th) (Max) @ Id: 1V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 38.5 nC @ 8 V
- Vgs (Max): ±10V
- Input Capacitance (Ciss) (Max) @ Vds: 1331 pF @ 10 V
- FET Feature: -
- Power Dissipation (Max): 1W (Ta)
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: SOT-23F
- Package / Case: SOT-23-3 Flat Leads
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