SSM3J35AFS,LF
Toshiba Semiconductor and Storage
Toshiba Semiconductor and Storage
MOSFET P-CH 20V 250MA SSM
$0.27
Available to order
Reference Price (USD)
3,000+
$0.04370
6,000+
$0.03800
15,000+
$0.03230
30,000+
$0.03040
75,000+
$0.02850
150,000+
$0.02660
Exquisite packaging
Discount
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For cutting-edge Transistors - FETs, MOSFETs - Single solutions, choose SSM3J35AFS,LF by Toshiba Semiconductor and Storage. A key player in Discrete Semiconductor Products, this MOSFET boasts low RDS(on), high current capacity, and excellent switching characteristics. Its applications span across telecom infrastructure, medical devices, and consumer electronics. Elevate your designs with SSM3J35AFS,LF inquire now for more details!
Specifications
- Product Status: Active
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 20 V
- Current - Continuous Drain (Id) @ 25°C: 250mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V
- Rds On (Max) @ Id, Vgs: 1.4Ohm @ 150mA, 4.5V
- Vgs(th) (Max) @ Id: 1V @ 100µA
- Gate Charge (Qg) (Max) @ Vgs: -
- Vgs (Max): ±10V
- Input Capacitance (Ciss) (Max) @ Vds: 42 pF @ 10 V
- FET Feature: -
- Power Dissipation (Max): 150mW (Ta)
- Operating Temperature: 150°C
- Mounting Type: Surface Mount
- Supplier Device Package: SSM
- Package / Case: SC-75, SOT-416
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