IPB160N04S4H1ATMA1
Infineon Technologies
Infineon Technologies
MOSFET N-CH 40V 160A TO263-7
$3.35
Available to order
Reference Price (USD)
1,000+
$1.13373
2,000+
$1.05554
5,000+
$1.01644
10,000+
$0.99512
Exquisite packaging
Discount
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IPB160N04S4H1ATMA1 by Infineon Technologies is a standout in the Discrete Semiconductor Products market, specifically for Transistors - FETs, MOSFETs - Single applications. Engineered for precision, this MOSFET offers exceptional gate control, low leakage current, and high power density. Ideal for use in audio amplifiers, DC-DC converters, and battery management systems, IPB160N04S4H1ATMA1 ensures top-tier performance. Don t miss out on this versatile component request a sample or quote now!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 40 V
- Current - Continuous Drain (Id) @ 25°C: 160A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 1.6mOhm @ 100A, 10V
- Vgs(th) (Max) @ Id: 4V @ 110µA
- Gate Charge (Qg) (Max) @ Vgs: 137 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 10920 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 167W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-TO263-7-3
- Package / Case: TO-263-7, D²Pak (6 Leads + Tab)
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