SSM3K333R,LF
Toshiba Semiconductor and Storage
Toshiba Semiconductor and Storage
MOSFET N CH 30V 6A 2-3Z1A
$0.47
Available to order
Reference Price (USD)
3,000+
$0.09540
6,000+
$0.09010
15,000+
$0.08215
30,000+
$0.07685
75,000+
$0.07420
Exquisite packaging
Discount
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SSM3K333R,LF by Toshiba Semiconductor and Storage is a standout in the Discrete Semiconductor Products market, specifically for Transistors - FETs, MOSFETs - Single applications. Engineered for precision, this MOSFET offers exceptional gate control, low leakage current, and high power density. Ideal for use in audio amplifiers, DC-DC converters, and battery management systems, SSM3K333R,LF ensures top-tier performance. Don t miss out on this versatile component request a sample or quote now!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30 V
- Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Rds On (Max) @ Id, Vgs: 28mOhm @ 5A, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 100µA
- Gate Charge (Qg) (Max) @ Vgs: 3.4 nC @ 4.5 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 436 pF @ 15 V
- FET Feature: -
- Power Dissipation (Max): 1W (Ta)
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: SOT-23F
- Package / Case: SOT-23-3 Flat Leads
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