SSM6K403TU,LF
Toshiba Semiconductor and Storage
Toshiba Semiconductor and Storage
MOSFET N-CH 20V 4.2A UF6
$0.51
Available to order
Reference Price (USD)
3,000+
$0.13200
6,000+
$0.12400
15,000+
$0.11600
30,000+
$0.11200
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Discover high-performance SSM6K403TU,LF from Toshiba Semiconductor and Storage, a leading solution in the Discrete Semiconductor Products category. Our Transistors - FETs, MOSFETs - Single are designed for efficiency and reliability, making them ideal for various electronic applications. These components feature low on-resistance, fast switching speeds, and excellent thermal performance, ensuring optimal functionality in power management and amplification circuits. Commonly used in automotive, industrial, and consumer electronics, SSM6K403TU,LF delivers consistent performance under demanding conditions. Interested in learning more? Contact us today for a detailed quote and technical support!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 20 V
- Current - Continuous Drain (Id) @ 25°C: 4.2A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4V
- Rds On (Max) @ Id, Vgs: 28mOhm @ 3A, 4V
- Vgs(th) (Max) @ Id: 1V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 16.8 nC @ 4 V
- Vgs (Max): ±10V
- Input Capacitance (Ciss) (Max) @ Vds: 1050 pF @ 10 V
- FET Feature: -
- Power Dissipation (Max): 500mW (Ta)
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: UF6
- Package / Case: 6-SMD, Flat Leads
Related Products
Infineon Technologies
BSO203SPHXUMA1
onsemi
FDS86252
onsemi
FDMC86240
Diodes Incorporated
DMP32D9UFZ-7B
Vishay Siliconix
SIS472DN-T1-GE3
Renesas Electronics America Inc
RJK6026DPP-B1#T2F
Diodes Incorporated
DMN3066L-7
Infineon Technologies
IPP037N06L3GXKSA1
Vishay Siliconix
SQA405EJ-T1_GE3
Diodes Incorporated