IPP037N06L3GXKSA1
Infineon Technologies
Infineon Technologies
MOSFET N-CH 60V 90A TO220-3
$2.34
Available to order
Reference Price (USD)
1+
$1.83000
10+
$1.65600
100+
$1.33030
500+
$1.03468
1,000+
$0.85731
Exquisite packaging
Discount
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Boost your electronic applications with IPP037N06L3GXKSA1, a reliable Transistors - FETs, MOSFETs - Single by Infineon Technologies. As a leader in Discrete Semiconductor Products, we offer components with low gate charge, high breakdown voltage, and excellent switching performance. Whether for aerospace, robotics, or energy systems, IPP037N06L3GXKSA1 meets the highest standards. Contact our team today for expert advice and competitive pricing!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60 V
- Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Rds On (Max) @ Id, Vgs: 3.7mOhm @ 90A, 10V
- Vgs(th) (Max) @ Id: 2.2V @ 93µA
- Gate Charge (Qg) (Max) @ Vgs: 79 nC @ 4.5 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 13000 pF @ 30 V
- FET Feature: -
- Power Dissipation (Max): 167W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: PG-TO220-3
- Package / Case: TO-220-3
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