SSM6L820R,LXHF
Toshiba Semiconductor and Storage
Toshiba Semiconductor and Storage
AUTO AEC-Q SS MOS N-CH + P-CH LO
$0.60
Available to order
Reference Price (USD)
1+
$0.60000
500+
$0.594
1000+
$0.588
1500+
$0.582
2000+
$0.576
2500+
$0.57
Exquisite packaging
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Optimize your electronic circuits with Toshiba Semiconductor and Storage s SSM6L820R,LXHF, a key player in the Discrete Semiconductor Products category for Transistors - FETs, MOSFETs - Arrays. These components are celebrated for their high efficiency, compact design, and long-lasting performance. Key features include fast switching, low threshold voltage, and superior thermal conductivity. Ideal for applications in power converters, RF amplifiers, and battery management systems. Reach out to us today to explore how SSM6L820R,LXHF can elevate your design and operational efficiency.
Specifications
- Product Status: Active
- FET Type: N and P-Channel
- FET Feature: Standard
- Drain to Source Voltage (Vdss): 30V, 20V
- Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
- Rds On (Max) @ Id, Vgs: 39.1mOhm @ 2A, 4.5V, 45mOhm @ 3.5A, 10V
- Vgs(th) (Max) @ Id: 1V @ 1mA, 1.2V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 3.2nC @ 4.5V, 6.7nC @4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 310pF @ 15V, 480pF @ 10V
- Power - Max: 1.4W (Ta)
- Operating Temperature: 150°C
- Mounting Type: Surface Mount
- Package / Case: 6-SMD, Flat Leads
- Supplier Device Package: 6-TSOP-F
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