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SSM6N7002BFE,LM

Toshiba Semiconductor and Storage
SSM6N7002BFE,LM Preview
Toshiba Semiconductor and Storage
MOSFET 2N-CH 60V 0.2A ES6
$0.35
Available to order
Reference Price (USD)
4,000+
$0.05520
8,000+
$0.04800
12,000+
$0.04080
28,000+
$0.03840
100,000+
$0.03360
Exquisite packaging
Discount
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Specifications

  • Product Status: Active
  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 200mA
  • Rds On (Max) @ Id, Vgs: 2.1Ohm @ 500mA, 10V
  • Vgs(th) (Max) @ Id: 3.1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: 17pF @ 25V
  • Power - Max: 150mW
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SOT-563, SOT-666
  • Supplier Device Package: ES6

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