SSM6P16FE(TE85L,F)
Toshiba Semiconductor and Storage
Toshiba Semiconductor and Storage
MOSFET P-CH 20V 0.1A ES6
$0.47
Available to order
Reference Price (USD)
1+
$0.55000
10+
$0.38600
100+
$0.25380
500+
$0.14996
1,000+
$0.11536
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Discover SSM6P16FE(TE85L,F), a versatile Transistors - FETs, MOSFETs - Single solution from Toshiba Semiconductor and Storage, a trusted name in Discrete Semiconductor Products. This MOSFET combines high power density with low on-resistance, perfect for compact and energy-efficient designs. Applications include solar inverters, electric vehicles, and wearable technology. Interested in this innovative component? Send us your inquiry now for more information!
Specifications
- Product Status: Active
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 20 V
- Current - Continuous Drain (Id) @ 25°C: 100mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On): -
- Rds On (Max) @ Id, Vgs: 8Ohm @ 10mA, 4V
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: -
- Vgs (Max): -
- Input Capacitance (Ciss) (Max) @ Vds: 11 pF @ 3 V
- FET Feature: -
- Power Dissipation (Max): 150mW (Ta)
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: ES6
- Package / Case: SOT-563, SOT-666
Related Products
Infineon Technologies
IPB090N06N3GATMA1
Infineon Technologies
IPB65R110CFDAATMA1
Fairchild Semiconductor
FQI4N90TU
Vishay Siliconix
SI4134DY-T1-GE3
STMicroelectronics
STP9NK70ZFP
onsemi
FDB33N25TM
Vishay Siliconix
SIHD1K4N60E-GE3
Rohm Semiconductor
R8002ANJFRGTL
Microchip Technology
APT19M120J
onsemi