STB28NM50N
STMicroelectronics
STMicroelectronics
MOSFET N-CH 500V 21A D2PAK
$4.74
Available to order
Reference Price (USD)
1,000+
$3.44960
2,000+
$3.27712
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Enhance your circuit performance with STB28NM50N, a premium Transistors - FETs, MOSFETs - Single from STMicroelectronics. As part of the Discrete Semiconductor Products lineup, this MOSFET excels in delivering high-speed switching and low power consumption. Its advanced design reduces heat generation and improves efficiency, suitable for power supplies, motor controls, and LED lighting. Trust STB28NM50N for consistent quality and long-lasting performance. For bulk orders or custom specifications, reach out to our sales team today!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 500 V
- Current - Continuous Drain (Id) @ 25°C: 21A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 158mOhm @ 10.5A, 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
- Vgs (Max): ±25V
- Input Capacitance (Ciss) (Max) @ Vds: 1735 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 150W (Tc)
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: D2PAK
- Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Related Products
onsemi
5LN01M-TL-H
Vishay Siliconix
SIR800ADP-T1-RE3
Rohm Semiconductor
RSF010P05TL
Microchip Technology
VP0104N3-G
onsemi
FDB86569-F085
Infineon Technologies
IPD78CN10NGATMA1
Toshiba Semiconductor and Storage
XPH4R714MC,L1XHQ
Infineon Technologies
IPP039N10N5AKSA1
Toshiba Semiconductor and Storage
TK31Z60X,S1F
UnitedSiC