STD12NF06L-1
STMicroelectronics
STMicroelectronics
MOSFET N-CH 60V 12A IPAK
$1.12
Available to order
Reference Price (USD)
1+
$1.62000
75+
$1.30480
150+
$1.15113
525+
$0.90971
1,050+
$0.73416
2,550+
$0.69027
5,025+
$0.65955
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
STD12NF06L-1 by STMicroelectronics is a standout in the Discrete Semiconductor Products market, specifically for Transistors - FETs, MOSFETs - Single applications. Engineered for precision, this MOSFET offers exceptional gate control, low leakage current, and high power density. Ideal for use in audio amplifiers, DC-DC converters, and battery management systems, STD12NF06L-1 ensures top-tier performance. Don t miss out on this versatile component request a sample or quote now!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60 V
- Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
- Rds On (Max) @ Id, Vgs: 100mOhm @ 6A, 10V
- Vgs(th) (Max) @ Id: 2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 5 V
- Vgs (Max): ±16V
- Input Capacitance (Ciss) (Max) @ Vds: 350 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 42.8W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: I-PAK
- Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Related Products
onsemi
FDD2670
IXYS
IXFA50N20X3
IXYS
IXTA1R4N120P
onsemi
FDB035N10A
Toshiba Semiconductor and Storage
SSM6H19NU,LF
Vishay Siliconix
SQ2315ES-T1_BE3
Fairchild Semiconductor
FDFS6N303
Vishay Siliconix
SI7615ADN-T1-GE3
onsemi
5LN01SS-TL-H
onsemi