STF25N60M2-EP
STMicroelectronics
STMicroelectronics
MOSFET N-CH 600V 18A TO220FP
$3.15
Available to order
Reference Price (USD)
1+
$4.91000
50+
$3.99760
100+
$3.66750
500+
$3.02400
1,000+
$2.59500
2,500+
$2.47950
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
STMicroelectronics presents STF25N60M2-EP, a high-performance Transistors - FETs, MOSFETs - Single in the Discrete Semiconductor Products category. Designed for efficiency, this component features minimal conduction losses and superior thermal performance, making it ideal for high-frequency applications. From industrial automation to smart home devices, STF25N60M2-EP delivers unmatched reliability. Get in touch today for technical specifications and purchasing options!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 600 V
- Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 188mOhm @ 9A, 10V
- Vgs(th) (Max) @ Id: 4.75V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
- Vgs (Max): ±25V
- Input Capacitance (Ciss) (Max) @ Vds: 1090 pF @ 100 V
- FET Feature: -
- Power Dissipation (Max): 30W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220FP
- Package / Case: TO-220-3 Full Pack
Related Products
onsemi
FCPF190N65S3L1
Infineon Technologies
SPB11N60C2
onsemi
NDB6060L
Nexperia USA Inc.
PMV90ENER
Infineon Technologies
IPD50N03S207ATMA1
IXYS
IXFH94N30P3
Vishay Siliconix
IRF830SPBF
Infineon Technologies
IRFR120ZTRPBF
Taiwan Semiconductor Corporation
TSM60NB150CF C0G
onsemi