RGTV60TS65DGC11
Rohm Semiconductor
Rohm Semiconductor
650V 30A FIELD STOP TRENCH IGBT
$6.37
Available to order
Reference Price (USD)
1+
$5.01000
10+
$4.49600
25+
$4.25040
100+
$3.68360
450+
$3.49464
900+
$3.13574
1,350+
$2.64460
Exquisite packaging
Discount
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Choose RGTV60TS65DGC11 Single IGBTs by Rohm Semiconductor for superior power handling in demanding environments. From railway systems to industrial drives, these transistors excel with features like avalanche ruggedness and integrated diodes. Their modular design simplifies installation and maintenance. Rohm Semiconductor's reputation for quality makes RGTV60TS65DGC11 a smart investment. Email us now for datasheets and volume discounts!
Specifications
- Product Status: Active
- IGBT Type: Trench Field Stop
- Voltage - Collector Emitter Breakdown (Max): 650 V
- Current - Collector (Ic) (Max): 60 A
- Current - Collector Pulsed (Icm): 120 A
- Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 30A
- Power - Max: 194 W
- Switching Energy: 570µJ (on), 500µJ (off)
- Input Type: Standard
- Gate Charge: 64 nC
- Td (on/off) @ 25°C: 33ns/105ns
- Test Condition: 400V, 30A, 10Ohm, 15V
- Reverse Recovery Time (trr): 95 ns
- Operating Temperature: -40°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-247-3
- Supplier Device Package: TO-247N
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